JPH0617320Y2 - メモリ装置 - Google Patents
メモリ装置Info
- Publication number
- JPH0617320Y2 JPH0617320Y2 JP1987178058U JP17805887U JPH0617320Y2 JP H0617320 Y2 JPH0617320 Y2 JP H0617320Y2 JP 1987178058 U JP1987178058 U JP 1987178058U JP 17805887 U JP17805887 U JP 17805887U JP H0617320 Y2 JPH0617320 Y2 JP H0617320Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- capacitive element
- layer
- memory cells
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 description 40
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987178058U JPH0617320Y2 (ja) | 1987-11-21 | 1987-11-21 | メモリ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987178058U JPH0617320Y2 (ja) | 1987-11-21 | 1987-11-21 | メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0183350U JPH0183350U (en]) | 1989-06-02 |
JPH0617320Y2 true JPH0617320Y2 (ja) | 1994-05-02 |
Family
ID=31469692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1987178058U Expired - Lifetime JPH0617320Y2 (ja) | 1987-11-21 | 1987-11-21 | メモリ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0617320Y2 (en]) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100440432B1 (ko) * | 1999-06-21 | 2004-07-15 | 니쉰 컴퍼니., 엘티디 | 물품 수납용 컨테이너 |
-
1987
- 1987-11-21 JP JP1987178058U patent/JPH0617320Y2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100440432B1 (ko) * | 1999-06-21 | 2004-07-15 | 니쉰 컴퍼니., 엘티디 | 물품 수납용 컨테이너 |
Also Published As
Publication number | Publication date |
---|---|
JPH0183350U (en]) | 1989-06-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0775247B2 (ja) | 半導体記憶装置 | |
JPH02312269A (ja) | 半導体記憶装置およびその製造方法 | |
JP3449754B2 (ja) | Dram製造方法 | |
KR920005349A (ko) | 반도체 장치 및 그 제조방법 | |
KR100528352B1 (ko) | Dram-셀장치및그제조방법 | |
US5268322A (en) | Method of making DRAM having a stacked capacitor | |
JPS6155258B2 (en]) | ||
JPH0617320Y2 (ja) | メモリ装置 | |
JPH0294561A (ja) | 半導体記憶装置およびその製造方法 | |
JP3241789B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JPH02257670A (ja) | 半導体記憶装置およびその製造方法 | |
JPH06120446A (ja) | 半導体記憶装置及びその製造方法 | |
JP2887623B2 (ja) | 半導体記憶装置及びその製造方法 | |
JPH0654801B2 (ja) | 半導体メモリセルおよびその製造方法 | |
JPH0727630Y2 (ja) | メモリ装置 | |
JP2923699B2 (ja) | 半導体記憶装置及びその製造方法 | |
KR960015525B1 (ko) | 반도체 소자의 제조방법 | |
JPH01119053A (ja) | 半導体メモリ装置 | |
JPS6110271A (ja) | 半導体装置 | |
KR100334575B1 (ko) | 반도체 메모리 제조 방법 | |
JPH04216666A (ja) | 半導体装置及びその製造方法 | |
KR960005250B1 (ko) | 캐비티-캐패시터 형성방법 | |
KR100294696B1 (ko) | 반도체 소자 및 그 제조방법 | |
JP2827377B2 (ja) | 半導体集積回路 | |
KR0133831B1 (ko) | 에스램(SRAM) 캐패시턴스(Capacitance)가 증가된 에스램 제조방법 |